Control of large area VHF plasma produced at high pressureNISHIMIYA, Tatsuyuki; YAMANE, Tsukasa; TAKEUCHI, Yoshiaki et al.Thin solid films. 2011, Vol 519, Num 20, pp 6931-6934, issn 0040-6090, 4 p.Conference Paper

Effects of RF bias power on electron energy distribution function and plasma uniformity in inductively coupled argon plasmaLEE, Hyo-Chang; BANG, Jin-Young; CHUNG, Chin-Wook et al.Thin solid films. 2011, Vol 519, Num 20, pp 7009-7013, issn 0040-6090, 5 p.Conference Paper

Effects of photoirradiation in UV and VUV regions during plasma exposure to polymersCHO, Ken; SETSUHARA, Yuichi; TAKENAKA, Kosuke et al.Thin solid films. 2011, Vol 519, Num 20, pp 6810-6814, issn 0040-6090, 5 p.Conference Paper

Investigation of aperiodic W/C multi-layer mirror for X-ray opticsZHANSHAN WANG; XINBIN CHENG; JINGTAO ZHU et al.Thin solid films. 2011, Vol 519, Num 20, pp 6712-6715, issn 0040-6090, 4 p.Conference Paper

Investigation on etch characteristics of MgO thin films using a HBr/Ar plasmaEUN HO KIM; YU BIN XIAO; SEON MI KONG et al.Thin solid films. 2011, Vol 519, Num 20, pp 6820-6823, issn 0040-6090, 4 p.Conference Paper

Low temperature silicon epitaxy from trichlorosilane via mesoplasma chemical vapor depositionFUKUDA, Junichi; KAMBARA, Makoto; YOSHIDA, Toyonobu et al.Thin solid films. 2011, Vol 519, Num 20, pp 6759-6762, issn 0040-6090, 4 p.Conference Paper

Surface energy modification of SiO_xC_yH_z film using PECVD by controlling the plasma processes for OMCTS (Si₄O₄C₈H₂₄) precursorJIN, Su B; CHOI, Yoon S; CHOI, In S et al.Thin solid films. 2011, Vol 519, Num 20, pp 6763-6768, issn 0040-6090, 6 p.Conference Paper

Highly selective dry etching of alternating phase-shift mask (PSM) structures for extreme ultraviolet lithography (EUVL) using inductively coupled plasmas (ICP)JUNG, H. Y; PARK, Y. R; LEE, H. J et al.Thin solid films. 2009, Vol 517, Num 14, pp 3938-3941, issn 0040-6090, 4 p.Conference Paper

Improvement of mechanical and electrical stabilities of flexible organic thin film transistor by using adhesive organic interlayerSEOL, Y. G; LEE, N.-E; PARK, S. H et al.Organic electronics. 2008, Vol 9, Num 3, pp 413-417, issn 1566-1199, 5 p.Article

Characterization of electron irradiated GaN n⁺-p diodeDONG UK LEE; EUN KYU KIM; BYUNG CHEOL LEE et al.Thin solid films. 2008, Vol 516, Num 11, pp 3482-3485, issn 0040-6090, 4 p.Conference Paper

Crystallization of amorphous Ge films induced by semiconductor diode laser annealingSAKAIKE, K; HIGASHI, S; MURAKAMI, H et al.Thin solid films. 2008, Vol 516, Num 11, pp 3595-3600, issn 0040-6090, 6 p.Conference Paper

Enhancement of the lifetime in organic light-emitting devices fabricated utilizing wide-bandgap-impurity-doped emitting layersCHOO, D. C; BANG, H. S; KWACK, B. C et al.Thin solid films. 2008, Vol 516, Num 11, pp 3610-3613, issn 0040-6090, 4 p.Conference Paper

Infinitely high etch selectivity during CH₄/H₂/Ar inductively coupled plasma (ICP) etching of indium tin oxide (ITO) with photoresist maskKIM, D. Y; KO, J. H; PARK, M. S et al.Thin solid films. 2008, Vol 516, Num 11, pp 3512-3516, issn 0040-6090, 5 p.Conference Paper

Prediction of etching results and etching stabilization by applying principal component regression to emission spectra during in-situ cleaningIWAKOSHI, Takehisa; HIROTA, Kosa; MORI, Masahito et al.Thin solid films. 2008, Vol 516, Num 11, pp 3464-3468, issn 0040-6090, 5 p.Conference Paper

Single dopant white electrophosphorescent light emitting diodes using heteroleptic tris-cyclometalated Iridium(III) complexesJI HYUN SEA; IN JOON KIM; YOUNG KWAN KIM et al.Thin solid films. 2008, Vol 516, Num 11, pp 3614-3617, issn 0040-6090, 4 p.Conference Paper

Synthesis and photo physical study of iridium complex of new pentafluorophenyl-substituted ligandsGUI YOUN PARK; JI HYUN SEO; YOUNG KWAN KIM et al.Thin solid films. 2008, Vol 516, Num 11, pp 3622-3626, issn 0040-6090, 5 p.Conference Paper

Effect of N₂O/SiH₄ flow ratio on properties of SiO_x thin films deposited by low-temperature remote plasma-enhanced chemical depositionKIM, D. J; HWANG, J. Y; KIM, T. J et al.Surface & coatings technology. 2007, Vol 201, Num 9-11, pp 5354-5357, issn 0257-8972, 4 p.Conference Paper

Effect of doping elements on ZnO etching characteristics with CH₄/H₂/Ar plasmaSHIN, M. H; PARK, M. S; JUNG, S. H et al.Thin solid films. 2007, Vol 515, Num 12, pp 4950-4954, issn 0040-6090, 5 p.Conference Paper

Deep dry etching of borosilicate glass using SF₆ and SF₆/Ar inductively coupled plasmasPARK, J. H; LEE, N.-E; LEE, Jaechan et al.Microelectronic engineering. 2005, Vol 82, Num 2, pp 119-128, issn 0167-9317, 10 p.Article

Strain relaxation of epitaxial CoSi₂ and SiGe layers in cap-Si/Si_0.83Ge_0.17/Si(001) and epi-CoSi₂/Si_0.83Ge_0.17/Si(001) structuresSHIN, D. O; SARDELA, M. R; BAN, S. H et al.Applied surface science. 2004, Vol 237, Num 1-4, pp 139-145, issn 0169-4332, 7 p.Conference Paper

Effect of N-containing additive gases on global warming gas emission during remote plasma cleaning process of silicon nitride PECVD chamber using C₄F₈/O₂/Ar chemistryOH, C. H; LEE, N.-E; KIM, J. H et al.Surface & coatings technology. 2003, Vol 171, Num 1-3, pp 267-272, issn 0257-8972, 6 p.Article

Growth of homoepitaxial Ge(001)2×1 by ultrahigh vacuum ion beam sputter depositionTOMASCH, G. A; KIM, Y.-W; MARKERT, L. C et al.Thin solid films. 1993, Vol 223, Num 2, pp 212-217, issn 0040-6090Article

Growth of GaN(0001)1×1 p, Al₂O₃(0001) by gas-source molecularPOWELL, R. C; LEE, N.-E; GREENE, J. E et al.Applied physics letters. 1992, Vol 60, Num 20, pp 2505-2507, issn 0003-6951Article

Organic field-effect transistor with extended indium tin oxide gate structure for selective pH sensingNGUYEN, T. N. T; SEOL, Y. G; LEE, N.-E et al.Organic electronics (Print). 2011, Vol 12, Num 11, pp 1815-1821, issn 1566-1199, 7 p.Article

Characterisation of thin film silicon films deposited by plasma enhanced chemical vapour deposition at 162 MHz, using a large area, scalable, multi-tile-electrode plasma sourceMONAGHAN, E; MICHNA, T; GAMAN, C et al.Thin solid films. 2011, Vol 519, Num 20, pp 6884-6886, issn 0040-6090, 3 p.Conference Paper